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| polyfet rf devices ST744 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 100.0 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 190 Watts Junction to Case Thermal Resistance o 0.85 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 125 V Drain to Source Voltage 125 V Gate to Source Voltage 20 V 7.0 A RF CHARACTERISTICS ( 100.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 16 45 5:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = 0.80 A, Vds = 50.0 V, F = Idq = 0.80 A, Vds = 50.0 V, F = 175 MHz 175 MHz VSWR Idq = 0.80 A, Vds = 50.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 3.2 0.65 14.00 192.0 0.8 68.0 MIN 125 4.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 40.00 mA, Vgs = 0V Vds = 50.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.20 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 4.00 A Vgs = 20V, Vds = 10V Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com ST744 POUT VS PIN GRAPH ST744 140 120 100 CAPACITANCE VS VOLTAGE S1E 4 DIE CAPACITANCE 20 19 100 1000 P in v s P o u t F re q = 1 7 5 M h z ;V d s = 5 0 V d c , I d q = 8 0 0 m a Ciss 18 Pout 80 60 17 16 10 Coss Gain 40 20 0 0 1 2 3 P in in w a tts 4 5 Efficiency@100W = 45% 15 14 13 Crss 1 0.1 0 5 10 15 20 VDS IN VOLTS 25 30 35 40 45 50 IV CURVE S1E 4 DIE IV 16 14 12 ID IN AMPS 10 8 6 4 2 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6v INVOLTS vg=8v 14 0 16 18 vg=12v 20 ID & GM VS VGS 100.00 S1E 4 DIE ID & GM Vs VG Id Id in amps; Gm in mhos 10.00 gM 1.00 0.10 0 2 4 6 8 10 Vgs in Volts 12 14 16 18 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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